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Growth and Electrostatic/chemical Properties of Metal/LaAlO3/SrTiO3 Heterostructures
Published on: February 8, 2018
Tailoring the structural and functional properties of spray-pyrolyzed Ga2O3 thin films via Al doping
Vadim Morari1, Geanina V Mihai1,2, Abdulkarim Alshibani1,2
1D. Ghitu Institute of Electronic Engineering and Nanotechnologies, Technical University of Moldova, Academiei str. 3/3, Chisinau MD-2028, Republic of Moldova.
Abstract:
Undoped and Al-doped α-Ga2O3 thin films (1-3 vol % of Al in precursor solution) were successfully deposited on Si substrates by spray pyrolysis at 500 °C and systematically investigated in terms of morphological, structural, compositional, optical, and electrical properties. Atomic force microscopy analysis revealed that moderate Al incorporation significantly improves surface morphology, reducing the root mean square roughness from 2.0 nm (undoped) to a minimum of 1.25 nm at 2 vol % Al, followed by a slight increase at 3 vol % Al due to possible lattice strain and compositional inhomogeneity. Cross-sectional scanning electron microscopy images confirmed the formation of dense, crack-free, and well-adhered films with thicknesses ranging from 445 to 540 nm, indicating that Al incorporation affects growth kinetics. Energy-dispersive X-ray analysis verified successful Al incorporation and slight compositional variations, suggesting modifications in defect chemistry. X-ray diffraction results demonstrated that all films crystallize in the α-Ga2O3 phase with a corundum-type structure, while Al doping significantly influences crystal orientation, crystallite size, and lattice strain without altering the phase. Optical measurements revealed high transparency (≈90%) in the visible region for all samples. The optical bandgap increased slightly from 4.82 eV (undoped) to 4.87 eV (3 vol % Al), indicating successful substitutional incorporation of Al3+ and tunable optical properties. Electrical measurements showed linear current-voltage characteristics, confirming ohmic conduction. The resistance decreased from 17.32 MΩ (undoped) to 0.47 MΩ (3 vol % Al), demonstrating enhanced conductivity while preserving the semiconducting nature of the material. Overall, controlled Al doping effectively tailors the microstructural, optical, and electrical properties of α-Ga2O3 thin films, with 2 vol % Al identified as the optimal concentration for achieving improved surface morphology and balanced functional performance.

