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Plasmonics-Based Multifunctional Electrodes for Low-Power-Consumption Compact Color-Image Sensors
Keng-Te Lin1, Hsuen-Li Chen1, Yu-Sheng Lai2
1Department of Materials Science and Engineering, National Taiwan University , 1, Sec. 4, Roosevelt Road, Taipei 10610, Taiwan.
ACS Applied Materials & Interfaces
|March 2, 2016
Summary
Researchers developed a novel surface plasmonics-based color-image sensor using aluminum and silicon. This compact, microlens-free device offers efficient color splitting and high photoelectric response at zero bias, simplifying fabrication and enhancing performance for advanced imaging applications.
Area of Science:
- Optoelectronics
- Materials Science
- Nanotechnology
Background:
- Contemporary color-image sensors require high pixel density, efficient color splitting, and low power consumption.
- Existing sensors often involve complex structures and fabrication processes, limiting miniaturization and integration.
- Interference phenomena in conventional sensors can degrade color-splitting spectra.
Purpose of the Study:
- To develop a novel surface plasmonics-based color-image sensor with a simplified structure and enhanced performance.
- To achieve efficient color splitting, high photoelectric response, and zero-bias operation.
- To explore the potential for direct integration with CMOS technology.
Main Methods:
- Fabrication of a compact sensor using a single-layer aluminum (Al) film as a multifunctional electrode on a silicon (Si) substrate.
- Utilizing the near-field surface plasmonic effect at the Al-Si junction to enhance optical absorption in silicon.
- Employing Schottky-based plasmonic electrodes for simultaneous color splitting, signal conversion, and carrier collection.
Main Results:
- Demonstrated a microlens-free, zero-bias color-image sensor with a high photoelectric response.
- Achieved simultaneous fabrication of red, green, and blue pixels in a single lithography step.
- Observed significant photoelectric current output even under low-light conditions due to enhanced optical absorption.
- Reported direct conversion of photocurrent to photovoltage with sufficient output for detection at low light intensities (femtowatts/µm²).
Conclusions:
- The developed plasmonic Schottky-based sensor offers a simplified device structure and fabrication process.
- The multifunctional electrode design effectively performs color splitting, signal conversion, and carrier collection, avoiding interference.
- The device's ability to operate at zero bias and directly output voltage shows great potential for integration with CMOS technology, enabling higher pixel density.
