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Weak antilocalization in Cd3As2 thin films.

Bo Zhao¹, Peihong Cheng², Haiyang Pan¹

¹National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and College of Physics, Nanjing University, Nanjing, 210093, P.R. China.

Scientific Reports

|March 4, 2016

Summary

This summary is machine-generated.

This study investigates Cd3As2 films, revealing weak antilocalization phenomena explained by the Hikami-Larkin-Nagaoka (HLN) theory. Electron-electron interactions are identified as the primary cause of dephasing in this Dirac material.

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Area of Science:

Condensed matter physics
Materials science
Topological materials

Background:

Cd3As2 is theoretically predicted as a 3D Dirac material with massless Dirac fermions.
This topological phase exhibits linear energy dispersion.

Purpose of the Study:

To experimentally investigate the electronic properties of Cd3As2 films.
To understand the underlying physics of magnetoresistance in these films.

Main Methods:

Low-temperature magnetoresistance measurements on a ~50 nm thick Cd3As2 film.
Analysis using the 2D Hikami-Larkin-Nagaoka (HLN) theory.
Investigation of temperature-dependent scaling behavior to probe electron-electron interactions.

Main Results:

Observed weak antilocalization (WAL) under perpendicular magnetic fields.
WAL is also present when the magnetic field is parallel to the electric field.
Electron-electron interactions are identified as the source of dephasing.

Conclusions:

The study confirms WAL in Cd3As2 films, consistent with theoretical predictions.
The findings highlight the role of electron-electron interactions and inter-channel coupling in quasi-2D Dirac materials.
This research contributes to the understanding of topological quantum phenomena in novel materials.