Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Fermi Level Dynamics01:12

Fermi Level Dynamics

962
The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
962
Fermi Level01:18

Fermi Level

2.3K
The Fermi-Dirac function is represented by an S-shaped curve indicating the probability of an energy state being occupied by an electron at a given temperature. The Fermi level is the energy level at which there is a fifty percent chance of finding an electron, and it is positioned between the lower-energy valence band and the higher-energy conduction band.
At absolute zero temperature, electrons fill all energy states up to the Fermi level, leaving upper states empty. As the temperature rises,...
2.3K
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

801
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
801
The Electrical Double Layer01:30

The Electrical Double Layer

122
In the region where two bulk phases meet, an intricate electric charge distribution arises due to charge transfer, ion adsorption, molecular orientation, and charge distortion. This complex distribution is commonly referred to as the electrical double layer.When a solid electrode interfaces with ions in an electrolyte solution, the speed of electron transfer dictates the rates of oxidation and reduction. The electrode acquires a charge through the escape of atoms into the solution as cations or...
122
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

1.3K
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
1.3K
Potential Due to a Polarized Object01:29

Potential Due to a Polarized Object

903
A neutral atom consists of a positively charged nucleus surrounded by a negatively charged electron cloud. When placed in an external electric field, the external electric force pulls the electrons and nucleus apart, opposite to the intrinsic attraction between the nucleus and the electrons. The opposing forces balance each other with a slight shift between the center of masses of the nucleus and the electron cloud, resulting in a polarized atom. On the other hand, a few molecules, like water,...
903

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Local Spin Density Approximation Strongly Improved by a Better-Informed Local Scaling of Its Self-Interaction Correction.

Journal of chemical theory and computation·2026
Same author

Electron localization in noncompact covalent bonds captured by the r<sup>2</sup>SCAN+<i>V</i> approach.

Proceedings of the National Academy of Sciences of the United States of America·2026
Same author

Hartree-Fock density functional theory works through error cancellation for the interaction energies of halogen and chalcogen bonded complexes.

The Journal of chemical physics·2026
Same author

ΔSCF Excitation Energies up a Ladder of Ground-State Density Functionals.

The journal of physical chemistry. A·2025
Same author

Comment on "Accurate Correlation Potentials from the Self-Consistent Random Phase Approximation".

Physical review letters·2025
Same author

The electron localization function and the chemical interpretation of Fermi orbital descriptors in Fermi-Löwdin self-interaction correction calculations.

The Journal of chemical physics·2025
Same journal

Monolithic Axial InGaAs Quantum Dot Emitters in GaAs-Based Nanowires via Sb-Mediated Facet Engineering.

Nano letters·2026
Same journal

Electrical Imaging of DNA Substructures Using Quasi-Static Nanopore Scanning.

Nano letters·2026
Same journal

Structural Basis of Hemoglobin Amyloid Fibrils Revealed by cryo-EM and Molecular Dynamics Simulations.

Nano letters·2026
Same journal

Rashba-Related Spin-Selective Effect in 2D Chiral Perovskites with Achiral Organic Cation Spacers.

Nano letters·2026
Same journal

Visualizing Superconducting Gap Modulation Induced by Pair-Breaking Scattering Interference in Bulk FeSe.

Nano letters·2026
Same journal

Generalized Geometric Phase for Coupled Meta-Atoms.

Nano letters·2026
See all related articles

Related Experiment Video

Updated: Mar 24, 2026

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

12.1K

Bending Two-Dimensional Materials To Control Charge Localization and Fermi-Level Shift.

Liping Yu1, Adrienn Ruzsinszky1, John P Perdew1

  • 1Department of Physics, Temple University , Philadelphia, Pennsylvania 19122, United States.

Nano Letters
|March 4, 2016
PubMed
Summary
This summary is machine-generated.

Mechanical bending offers a novel way to control conductivity in 2D materials like MoS2 and phosphorene. This technique avoids crystal damage and Fermi-level pinning, enabling new electronic applications.

Keywords:
Fermi-energy pinningFlexible electronicsbending stiffnessfirst-principles calculationsstrain engineeringtwo-dimensional materials

More Related Videos

Fabricating van der Waals Heterostructures with Precise Rotational Alignment
09:25

Fabricating van der Waals Heterostructures with Precise Rotational Alignment

Published on: July 5, 2019

10.3K
Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
08:43

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

Published on: November 7, 2016

8.5K

Related Experiment Videos

Last Updated: Mar 24, 2026

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

12.1K
Fabricating van der Waals Heterostructures with Precise Rotational Alignment
09:25

Fabricating van der Waals Heterostructures with Precise Rotational Alignment

Published on: July 5, 2019

10.3K
Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
08:43

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

Published on: November 7, 2016

8.5K

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Achieving high-performance electronics necessitates precise control over semiconductor conductivity.
  • Traditional doping methods in two-dimensional (2D) materials can damage crystal structures and reduce carrier mobility.
  • Contact engineering faces limitations due to Fermi-level pinning, hindering carrier control.

Purpose of the Study:

  • To investigate the potential of mechanical bending for controlling conductivity and Fermi-level shifts in 2D materials.
  • To explore bending-induced changes in charge localization and electronic band structures.
  • To provide fundamental insights into the mechanical and electronic properties of bent 2D materials.

Main Methods:

  • First-principles calculations were employed to simulate the effects of mechanical bending.
  • Analysis focused on charge localization in the top valence bands of MoS2 and phosphorene nanoribbons.
  • Bending stiffness and effective thickness of 2D materials were derived from theoretical models.

Main Results:

  • Mechanical bending effectively controls conductivity and Fermi-level shifts in MoS2 and phosphorene nanoribbons.
  • Bending eliminates donor-like in-gap edge states and Fermi-level pinning in armchair MoS2.
  • A new bending-controllable in-gap state and a direct-indirect band gap transition were predicted for armchair phosphorene nanoribbons.

Conclusions:

  • Mechanical bending presents a viable, non-destructive method for tuning the electronic properties of 2D materials.
  • This approach overcomes limitations of traditional doping and contact engineering.
  • The findings open new avenues for designing flexible 2D electronic devices.