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Related Experiment Video

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Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

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Published on: April 4, 2017

Lasing in silicon-organic hybrid waveguides.

Dietmar Korn¹, Matthias Lauermann¹, Sebastian Koeber^1,2

¹Institute of Photonics and Quantum Electronics (IPQ), Karlsruhe Institute of Technology (KIT), 76131 Karlsruhe, Germany.

Nature Communications

|March 8, 2016

Summary

Researchers developed new silicon-organic hybrid (SOH) infrared lasers on a silicon-on-insulator (SOI) platform. These lasers overcome silicon

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Area of Science:

Photonics and optoelectronics
Materials science
Semiconductor device physics

Background:

Silicon photonics aims for large-scale integration using microelectronics fabrication.
On-chip light sources are a major challenge due to silicon's indirect bandgap, hindering efficient light emission and lasing.

Purpose of the Study:

To demonstrate a novel class of infrared lasers fabricated on the silicon-on-insulator (SOI) platform.
To overcome the limitations of silicon for on-chip light sources using a hybrid approach.

Main Methods:

Utilized the silicon-organic hybrid (SOH) integration concept.
Combined nanophotonic SOI waveguides with dye-doped organic cladding materials for optical gain.
Achieved pulsed room-temperature lasing.

Main Results:

Demonstrated pulsed room-temperature lasing at 1,310 nm.
Achieved on-chip peak output powers up to 1.1 W.
Showcased the potential for wavelength tunability by selecting different dye materials and resonator designs.

Conclusions:

The SOH approach provides an effective solution for on-chip infrared light sources on silicon.
This method enables efficient mass-production of silicon photonic devices emitting in the near-infrared spectrum.
Offers flexibility in tuning emission wavelengths for diverse applications.