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P-N junction

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

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Related Experiment Video

Updated: Mar 24, 2026

In situ Grazing Incidence Small Angle X-ray Scattering on Roll-To-Roll Coating of Organic Solar Cells with Laboratory X-ray Instrumentation

In situ Grazing Incidence Small Angle X-ray Scattering on Roll-To-Roll Coating of Organic Solar Cells with Laboratory X-ray Instrumentation

Published on: March 2, 2021

Solution-Processed p-Dopant as Interlayer in Polymer Solar Cells.

F Guillain^1,2, J Endres³, L Bourgeois^4,5

¹Bordeaux INP, IMS, CNRS, UMR 5218, F-33400, Talence, France.

ACS Applied Materials & Interfaces

|March 10, 2016

Summary

This summary is machine-generated.

We developed a new method to dope semiconducting polymers in organic solar cells using F4-TCNQ. This approach enhances power conversion efficiency and is suitable for flexible plastic substrates.

Keywords:

F4-TCNQ doping hole transport layer polymer solar cells solution-processing

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Morphology Control for Fully Printable Organic–Inorganic Bulk-heterojunction Solar Cells Based on a Ti-alkoxide and Semiconducting Polymer

Published on: January 10, 2017

Area of Science:

Materials Science
Organic Electronics
Photovoltaics

Background:

Organic solar cells (OSCs) offer potential for low-cost, flexible electronics.
Improving the efficiency and stability of bulk-heterojunction (BHJ) OSCs is crucial for commercialization.
Interface engineering plays a key role in optimizing charge extraction and device performance.

Purpose of the Study:

To introduce an original solution-processed doping method for the semiconducting polymer-metal interface in inverted BHJ OSCs.
To investigate the diffusion and doping mechanism of 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ) in a P3HT:PC61BM active layer.
To evaluate the impact of this doping strategy on the power conversion efficiency (PCE) of OSCs.

Main Methods:

Solution processing of F4-TCNQ on top of the P3HT:PC61BM BHJ layer.
Thermally induced diffusion of F4-TCNQ into the BHJ at 100 °C.
Characterization using X-ray Photoelectron Spectroscopy (XPS) and UV-vis-NIR absorption spectroscopy.
Fabrication and testing of inverted BHJ organic solar cells.

Main Results:

Evidence of F4-TCNQ diffusion into the BHJ layer after annealing, confirmed by reduced surface fluorine concentration via XPS.
Observation of a charge transfer band in UV-vis-NIR absorption spectra, indicating successful doping of P3HT.
Fabricated inverted OSCs achieved a power conversion efficiency of nearly 3.5% after annealing.
The doping process requires a low annealing temperature, compatible with flexible substrates.

Conclusions:

The developed solution-processed F4-TCNQ doping method is effective for enhancing the performance of P3HT:PC61BM based inverted OSCs.
The low-temperature annealing required makes this approach suitable for printing on plastic flexible substrates.
This method offers a simple and efficient route to improve standard efficiency OSCs for flexible applications.