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Thin LiNbO3 on insulator electro-optic modulator.

Andrew J Mercante, David L K Eng, Matthew Konkol

|March 15, 2016

Summary

This summary is machine-generated.

Researchers developed a new method to integrate thin lithium niobate (LiNbO3) with silicon, enabling efficient electro-optic modulators. This fabrication technique achieved a low V(π)L of 7.1 V-cm for integrated photonics.

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Area of Science:

Photonics and Materials Science
Integrated Optics and Photonics

Background:

Lithium niobate (LiNbO3) is a key material for electro-optic modulators.
Integrating LiNbO3 with silicon (Si) is challenging due to material property differences.
Existing methods often involve complex fabrication or compromise device performance.

Purpose of the Study:

To present a novel fabrication and integration method for thin LiNbO3 on Si.
To demonstrate an efficient electro-optic modulator using this integrated platform.
To enable advanced photonic integrated circuits with enhanced electro-optic performance.

Main Methods:

Patterning an inverted ridge structure on X-cut LiNbO3 for optical waveguide definition.
Bonding mechanically thinned LiNbO3 (4 μm) to a Si handle wafer using a low dielectric constant adhesive layer.
Fabricating planar electrodes and characterizing the electro-optic modulator performance.

Main Results:

Successful integration of a 4 μm thin LiNbO3 film onto a Si substrate.
Demonstration of an electro-optic modulator with a low V(π)L of 7.1 V-cm.
Achieved low optical loss and high film quality suitable for a 0.8 cm interaction length.

Conclusions:

The developed method enables efficient fabrication of thin LiNbO3-on-Si photonic devices.
This integration approach is promising for high-performance electro-optic modulators in integrated photonics.
The technique facilitates the development of advanced optical communication and signal processing systems.