Mapping electron-beam-injected trapped charge with scattering scanning near-field optical microscopy

Area of Science:

• Materials Science
• Nanotechnology
• Surface Science

Background:

• Scattering scanning near-field optical microscopy (s-SNOM) is crucial for nanoscale optical and optoelectronic property mapping.
• Understanding surface charge effects is vital for advanced material characterization.

Purpose of the Study:

• To investigate the impact of electron beam-injected trapped charges on s-SNOM imaging.
• To demonstrate nanoscale mapping of surface trapped charges for material property tailoring.

Main Methods:

• Utilized electron beam to inject charges into dielectric sample surfaces.
• Employed s-SNOM to analyze the resulting changes in sample-dipole interactions and image content.

Main Results:

• Confirmed that trapped electric charges significantly affect the sample-dipole interaction.
• Demonstrated that these charge effects directly alter s-SNOM image content.
• Established a method for nanoscale mapping of surface trapped charges.

Conclusions:

• Electron beam-induced surface charges impact s-SNOM imaging, offering a new characterization dimension.
• Nanoscale charge mapping is valuable for precise electrostatic property control in dielectrics and semiconductors.
• The developed methodology has implications for biomedical materials like hydroxyapatite and semiconductor device fabrication.