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Highly Flexible and High-Performance Complementary Inverters of Large-Area Transition Metal Dichalcogenide Monolayers

Jiang Pu1, Kazuma Funahashi1, Chang-Hsiao Chen2

  • 1Department of Advanced Science and Engineering, Waseda University, Tokyo, 169-8555, Japan.

Advanced Materials (Deerfield Beach, Fla.)
|March 24, 2016
PubMed

Keywords:
CMOS inverterschemical vapor depositionelectric double layer transistorsflexible electronicstransition metal dichalcogenide monolayers

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