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Updated: Mar 23, 2026

Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials
Published on: July 18, 2025
Strong interfacial exchange field in the graphene/EuS heterostructure
Peng Wei1,2, Sunwoo Lee3,4, Florian Lemaitre3,5
1Francis Bitter Magnet Laboratory, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.
We demonstrate a significant magnetic exchange field (MEF) in graphene/EuS devices, enhancing spin signals for next-generation spintronics. This breakthrough enables low-power, quantum-capable 2D spintronic devices.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Quantum Information Science
Background:
- Two-dimensional (2D) materials offer potential for advanced spintronic devices.
- Controlling spin properties in 2D materials is crucial for device functionality.
- Magnetic exchange field (MEF) offers a promising route for spin control.
Purpose of the Study:
- To investigate the induction and effects of magnetic exchange field (MEF) in graphene.
- To explore the potential of graphene/EuS heterostructures for spintronic applications.
- To demonstrate enhanced spin signals and novel electronic states in 2D materials.
Main Methods:
- Fabrication of graphene/EuS heterostructures.
- Measurement of magnetic exchange field (MEF) effects on graphene's electronic properties.
- Characterization of spin generation and modulation via the Zeeman spin Hall effect.
Main Results:
- A substantial MEF exceeding 14 Tesla was induced in graphene by EuS.
- Orders-of-magnitude enhancement of spin signals due to the Zeeman spin Hall effect.
- Observation of a new ferromagnetic ground state in Dirac electrons, potentially enabling quantized edge transport.
Conclusions:
- Graphene/EuS devices exhibit significant MEF, crucial for 2D spintronics.
- The demonstrated MEF effect is key for future spin logic and memory devices.
- This work paves the way for classical and quantum information processing using 2D materials.
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