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Updated: Mar 23, 2026

Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials
Published on: July 18, 2025
Gabriel C Constantinescu1, Nicholas D M Hine2
1Cavendish Laboratory, University of Cambridge , 19 JJ Thomson Avenue, Cambridge CB3 0HE, United Kingdom.
Hexagonal boron nitride (hBN) stabilizes black phosphorus (BP) and preserves its electronic properties. This interface enables high-performance tunneling field-effect transistors (TFETs) with low power consumption and fast switching.
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