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Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
Published on: October 13, 2017
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Shake-up effect in photoluminescence of integer quantum Hall system formed in InGaAs/InP quantum wells
Yu A Pusep1, M A Tito, R R LaPierre
1São Carlos Institute of Physics, University of São Paulo, PO Box 369, 13560-970 São Carlos, SP, Brazil.
Summary
Investigating InGaAs/InP quantum wells using magneto-photoluminescence reveals Landau level occupancy exceeding the Fermi level at low filling factors (ν ≤ 3). This is attributed to electron-electron interactions causing shake-up processes.
Area of Science:
- Condensed Matter Physics
- Semiconductor Nanostructures
- Quantum Optics
Background:
- Understanding electron behavior in quantum wells under magnetic fields is crucial for advanced electronic and optoelectronic devices.
- Magneto-photoluminescence spectroscopy is a key technique for probing electronic states in low-dimensional semiconductor systems.
Purpose of the Study:
- To investigate Landau level population dynamics in InGaAs/InP single quantum wells under varying magnetic fields.
- To elucidate the role of electron-electron interactions and shake-up processes in Landau level occupancy.
- To analyze polarization-resolved emission spectra for insights into spin-polarized states and excitonic complexes.
Main Methods:
- Polarization-resolved magneto-photoluminescence spectroscopy was employed.
- Measurements were conducted on InGaAs/InP single quantum wells.
- Analysis focused on photoluminescence emission across different Landau level filling factors (ν).
Main Results:
- At filling factors ν ≥ 4, the number of populated Landau levels matched the filling factor.
- At filling factors ν ≤ 3, Landau levels above the Fermi level were occupied, indicating shake-up processes.
- Shake-up processes, driven by electron-electron interactions, were observed as a downshifted cusp in σ- polarized emission around ν = 2.
- Magnetic field-induced polarization of emission from excited Landau levels was detected.
- Bound electron-hole excitonic complexes (trions) associated with different Landau levels were identified.
Conclusions:
- Electron-electron interactions significantly influence Landau level occupancy in InGaAs/InP quantum wells, leading to deviations from simple Fermi-Dirac statistics.
- The observed shake-up processes and polarization effects provide detailed insights into the many-body physics within these quantum structures.
- The identification of trions offers further understanding of excitonic behavior in magnetic fields.
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