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InGaN nanowires with high InN molar fraction: growth, structural and optical properties
Xin Zhang1, Hugo Lourenço-Martins, Sophie Meuret
1Univ. Grenoble Alpes, 38000 Grenoble, France. CEA, INAC-PHELIQS, 'Nanophysique et semiconducteurs' group, 38000 Grenoble, France. ALEDIA, 17 rue des martyrs, Bât. M23, 38054 Grenoble Cedex 9, France.
Nanotechnology
|April 5, 2016
Summary
Researchers studied gallium nitride/indium gallium nitride/gallium nitride (GaN/InGaN/GaN) nanowires with high indium nitride (InN) content. High InN incorporation was achieved without defects, and annealing improved photoluminescence, highlighting nanowire potential for devices.
Area of Science:
- Materials Science
- Nanotechnology
- Semiconductor Physics
Background:
- Gallium nitride (GaN) and indium gallium nitride (InGaN) nanowires are crucial for optoelectronic devices.
- Achieving high indium nitride (InN) molar fractions in InGaN is challenging but essential for tuning optical properties.
Purpose of the Study:
- To investigate the structural and optical properties of GaN/InGaN/GaN nanowire heterostructures with high InN content.
- To determine the stability of N-polar InGaN and the effect of annealing on optical properties.
Main Methods:
- Nanoscale characterization using electron microscopy.
- Extended X-ray absorption fine structure (EXAFS) spectroscopy.
- Nano-cathodoluminescence (nCL) spectroscopy.
- Molecular beam epitaxy (MBE) for nanowire growth.
Main Results:
- Successfully incorporated InN molar fractions up to 50% in GaN/InGaN/GaN nanowires without extended defects.
- Experimentally determined the N-polar InGaN stability temperature diagram, showing higher stability than metal-polar InGaN.
- Annealing GaN-capped InGaN nanowires up to 800 °C resulted in a 20-fold increase in photoluminescence intensity due to point defect curing.
Conclusions:
- GaN/InGaN/GaN nanowires with high InN content are promising for device applications.
- N-polar InGaN exhibits enhanced thermal stability, expanding its processing window.
- Post-growth annealing is an effective method for improving the optical performance of InGaN nanowires by reducing defects.
