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Performance Improvement of Total Ionization Dose Radiation Sensor Devices Using Fluorine-Treated MOHOS.

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Fluorine-treated titanium nitride-silicon oxide-hafnium oxide-silicon oxide-silicon (F-MOHOS) devices show improved performance for total ionization dose (TID) radiation sensing. These devices exhibit enhanced charge retention and a strong correlation between threshold voltage shift and TID.

Keywords:
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Area of Science:

  • Semiconductor device physics
  • Radiation effects in electronics
  • Materials science for sensors

Background:

  • Metal-oxide-nitride-oxide-silicon (MONOS) devices are used for radiation sensing.
  • Total Ionization Dose (TID) effects can degrade device performance.
  • Hafnium oxide-based dielectrics are explored for improved reliability.

Purpose of the Study:

  • To investigate the performance improvements of Fluorine-treated Metal-Oxide-Hafnium Oxide-Silicon Oxide-Silicon (F-MOHOS) devices for TID radiation sensing.
  • To characterize the TID radiation-induced charge generation and charge-retention reliability of F-MOHOS devices.
  • To compare F-MOHOS performance against standard Metal-Oxide-Nitride-Oxide-Silicon (MONOS) and Metal-Oxide-Hafnium Oxide-Silicon Oxide-Silicon (MOHOS) devices.

Main Methods:

  • Fabrication of F-MOHOS devices.
  • Gamma irradiation testing to assess TID effects.
  • Measurement of threshold voltage (VT) shift and radiation-induced charge density.
  • Evaluation of charge retention characteristics.

Main Results:

  • F-MOHOS devices exhibit a significant decrease in threshold voltage (VT) after gamma irradiation.
  • Radiation-induced charge density in F-MOHOS is approximately six times higher than in standard MONOS devices.
  • A strong correlation between VT decrease and TID up to 5 Mrad was observed for F-MOHOS.
  • F-MOHOS devices show a 15% improvement in charge retention loss compared to MOHOS devices.

Conclusions:

  • F-MOHOS devices demonstrate enhanced performance for TID radiation sensing applications.
  • The improved charge retention and TID correlation suggest better reliability for radiation sensing.
  • F-MOHOS technology shows significant potential for future non-volatile TID radiation sensor development.