Dirty limit scattering behind the decreased anisotropy of doped YBa2Cu3O7-δ thin films

We measured the resistivity of pulsed-laser-deposited BaCeO3 (BCO)-doped YBCO thin films containing spherical BCO particles in fields up to 30 T. The average diameter of the particles depends on the dopant concentration being below 4 nm in all the samples. Raised values of the upper critical field, Bc2, were observed in all the samples. Additionally, the parameter γ, describing the electron mass anisotropy, decreased from 6.2 in the undoped sample to 3.1 in the 8 wt.% BCO-doped sample. These results can be explained by the increased number of defects decreasing the mean free path of electrons and thus lowering the coherence length, which in turn increases Bc2.