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First-Principle Electronic Properties of Dilute-P GaN(1-x)P(x) Alloy for Visible Light Emitters
Chee-Keong Tan1, Damir Borovac1, Wei Sun1
1Center for Photonics and Nanoelectronics, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, PA 18015, USA.
Abstract:
A study on the electronic properties of the dilute-P GaN(1-x)P(x)alloy using First-Principle Density Functional Theory (DFT) calculations is presented. Our results indicate a band gap energy coverage from 3.645 eV to 2.697 eV, with P-content varying from 0% to 12.5% respectively. In addition, through line fitting of calculated and experimental data, a bowing parameter of 9.5 ± 0.5 eV was obtained. The effective masses for electrons and holes are analyzed, as well as the split-off energy parameters where findings indicate minimal interband Auger recombination. The alloy also possesses the direct energy band gap property, indicating its strong potential as a candidate for future photonic device applications.
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