18.4%-Efficient Heterojunction Si Solar Cells Using Optimized ITO/Top Electrode
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Updated: Mar 22, 2026

Developing High Performance GaP/Si Heterojunction Solar Cells
Published on: November 16, 2018
Namwoo Kim1, Han-Don Um1, Inwoo Choi2
1Department of Energy Engineering, UNIST , Ulsan 44919, Republic of Korea.
Abstract:
We optimize the thickness of a transparent conducting oxide (TCO) layer, and apply a microscale mesh-pattern metal electrode for high-efficiency a-Si/c-Si heterojunction solar cells. A solar cell equipped with the proposed microgrid metal electrode demonstrates a high short-circuit current density (JSC) of 40.1 mA/cm(2), and achieves a high efficiency of 18.4% with an open-circuit voltage (VOC) of 618 mV and a fill factor (FF) of 74.1% as result of the shortened carrier path length and the decreased electrode area of the microgrid metal electrode. Furthermore, by optimizing the process sequence for electrode formation, we are able to effectively restore the reduction in VOC that occurs during the microgrid metal electrode formation process. This work is expected to become a fundamental study that can effectively improve current loss in a-Si/c-Si heterojunction solar cells through the optimization of transparent and metal electrodes.
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