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Efficient, Patternable Full-Color Perovskite Quantum Dot LEDs via Defect-Passivating Film-State Ligand Engineering.

Junho Kim1, Taehyun Kim1, Seungjae Lee1

  • 1School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea.

Small (Weinheim an Der Bergstrasse, Germany)
|May 13, 2026
PubMed
Summary

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This summary is machine-generated.

An advanced film-state ligand exchange process (A-FLEP) enhances perovskite quantum dot (PeQD) LEDs by using multi-ligand passivation. This method effectively reduces defects, improving charge injection and overall device performance for next-generation displays.

Area of Science:

  • Materials Science
  • Optoelectronics
  • Nanotechnology

Background:

  • Perovskite quantum dots (PeQDs) offer superior optoelectronic properties for advanced displays.
  • Effective surface ligand modification is crucial for passivating defects and enhancing charge injection in PeQD-based light-emitting diodes (LEDs).
  • Conventional film-state ligand exchange processes (C-FLEPs) often fail to fully passivate surface defects, limiting LED performance.

Purpose of the Study:

  • To introduce an advanced film-state ligand exchange process (A-FLEP) for improved PeQD LED fabrication.
  • To address surface defects more effectively using a multi-ligand passivation strategy.
  • To enhance the electrical properties and performance of PeQD LEDs.

Main Methods:

  • Developed an advanced film-state ligand exchange process (A-FLEP) incorporating a multi-ligand passivation strategy.
Keywords:
defect density controlfilm‐state ligand exchangeligand solution polaritymulti‐ligand passivation

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  • Carefully modulated the polarity of the ligand solution to prevent unintended ligand detachment during A-FLEP.
  • Fabricated and characterized PeQD LEDs using the A-FLEP method.

    • Main Results:

    • Achieved high external quantum efficiency (EQE) and luminance in green (21.44%, 35,960 cd m⁻²), red (13.23%, 1,295 cd m⁻²), and blue (1.86%, 720 cd m⁻²) PeQD LEDs.
    • Demonstrated significantly improved passivation of surface defects compared to conventional methods.
    • Showcased enhanced electrical properties of PeQD LEDs through the A-FLEP.

    Conclusions:

    • The A-FLEP with multi-ligand passivation offers a superior method for fabricating high-performance PeQD LEDs.
    • This strategy effectively overcomes limitations of C-FLEPs in defect passivation and charge injection.
    • The developed A-FLEP holds significant promise for the advancement of next-generation display technologies.