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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Julien Chopin1, Arshad Kudrolli2
1Gulliver UMR 7083, CNRS, ESPCI ParisTech, PSL Research University, 10 rue Vauquelin F-75005 Paris, France. julien.chopin@espci.fr and Sorbonne Universités, UPMC Univ Paris 06, CNRS, UMR 7190, Institut Jean Le Rond d'Alembert, 4 place Jussieu, F-75005 Paris, France.
Topological defects in stretched and twisted ribbons form triangular lattices of vertices and ridges, creating self-rigidified structures. Their behavior transitions between geometry- and elasticity-driven regimes based on applied tension and material properties.
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