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A High-Performance WSe2 /h-BN Photodetector using a Triphenylphosphine (PPh3 )-Based n-Doping Technique
Seo-Hyeon Jo1, Dong-Ho Kang1, Jaewoo Shim1
1School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon, 440-746, South Korea.
Abstract:
The effects of triphenylphosphine (PPh3 )-based n-doping and hexagonal boron nitride (h-BN) insertion on a tungsten diselenide (WSe2 ) photodetector are systematically studied, and a very high performance WSe2 /h-BN heterostucture-based photodetector is demonstrated with a record photoresponsivity (1.27 × 10(6) A W(-1) ) and temporal photoresponse (rise time: 2.8 ms, decay time: 20.8 ms) under 520 nm wavelength and 5 pW power laser illumination.
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