Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

Preparation of Samples for Electron Microscopy

Preparation of Samples for Electron Microscopy

To be visualized by an electron microscope, either transmission or scanning, biological samples need to be fixed (stabilized) so the electron beam does not destroy them and dried thoroughly (desiccated/dehydrated) so the vacuum does not affect them. Fixation needs to be done as quickly as possible because the sample properties will start changing as soon as it is removed from its natural environment. For example, in a tissue sample, the oxygen levels begin decreasing, causing an altered...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Hydrogen Peroxide-Enabled High-Quality Transition Interface for Top-Gated Molybdenum Disulfide Field-Effect Transistors.

ACS nano·2026

Same author

From N-type doping to phase transition in large-area MoS<sub>2</sub><i>via</i> controlled sulfur vacancy formation.

Nanoscale·2025

Same author

Phytotherapeutic BS012 and Its Active Component Ameliorate Allergic Asthma via Inhibition of Th2-Mediated Immune Response and Apoptosis.

Biomolecules & therapeutics·2024

Same author

Effect of Cl<sub>2</sub> Radical on Dry Development of Spin-Coated Metal Oxide Resist.

ACS applied materials & interfaces·2024

Same author

Biocompatible Co-organic Composite Thin Film Deposited by VHF Plasma-Enhanced Atomic Layer Deposition at a Low Temperature.

ACS omega·2024

Same author

Effect of Bias Frequency on Bottom-Up SiO<sub>2</sub> Gap-Filling Using Plasma-Enhanced Atomic Layer Deposition.

ACS applied materials & interfaces·2024

Same journal

Bifacial Perovskite Solar Cells by Lamination Approach With a PEDOT:PSS/d-Sorbitol Blended Adhesion Layer.

Small methods·2026

Same journal

Dual-Sided Interface Optimization Enables High-Brightness All-Solution-Processed ZnMgO-Based Green Perovskite QLEDs.

Small methods·2026

Same journal

Intelligent Sensing Gloves Enabled by Liquid Metal Atomized Spraying for Shared Human-Machine Interaction.

Small methods·2026

Same journal

Confinement-Amplified Tritiated Water Clean-Up in Functionalized Graphene Oxide Nanochannels.

Small methods·2026

Same journal

Optimizing the Development Process in Direct Photolithography for Efficient PeLEDs.

Small methods·2026

Same journal

Fluorinated Diluents Enable Crowded Solvation Environments to Form Anion-Rich SEIs for High-Performance Potassium-Ion Batteries.

Small methods·2026

See all related articles

Search research articles

Related Experiment Video

Updated: Jun 25, 2026

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

Published on: June 23, 2018

Dry Development of Dry Coated Sn-Based Inorganic Resist for Defect-Suppressed and High-Resolution Patterning Process.

Hee Ju Kim¹, Min Cheol Kim², Geun Young Yeom^1,3

¹School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, South Korea.

|June 24, 2026

Summary

This summary is machine-generated.

This study introduces asynchronously pulsed plasma development for tin-based resists, significantly reducing defects and line-edge roughness. This novel technique enhances patterning fidelity for sub-10 nm critical dimensions (CD) and improves process stability.

Keywords:

dry development dry resist inorganic photoresist metal oxide resist plasma development pulsed plasma

More Related Videos

Patterning Cells on Optically Transparent Indium Tin Oxide Electrodes

Patterning Cells on Optically Transparent Indium Tin Oxide Electrodes

Published on: August 20, 2007

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices

Published on: December 7, 2017

Related Experiment Videos

Last Updated: Jun 25, 2026

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

Published on: June 23, 2018

Patterning Cells on Optically Transparent Indium Tin Oxide Electrodes

Patterning Cells on Optically Transparent Indium Tin Oxide Electrodes

Published on: August 20, 2007

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices

Published on: December 7, 2017

Area of Science:

Materials Science
Plasma Physics
Semiconductor Manufacturing

Background:

Semiconductor technology demands advanced patterning for sub-10 nm critical dimension (CD) control.
Existing wet development methods face challenges with defectivity and process control.

Purpose of the Study:

To propose and evaluate a novel asynchronous pulsed plasma development process for Sn-based inorganic dry resists.
To enhance patterning fidelity and process stability in next-generation lithography.

Main Methods:

Utilized asynchronously pulsed plasma with alternate source and bias RF power application.
Developed Sn-based inorganic dry resists.
Characterized defectivity, line-edge roughness (LER), and process stability compared to wet development.

Main Results:

Pulsed plasma development achieved high chemical contrast and minimized physical damage.
Reduced defectivity (line bridging, scum) and LER by approximately 29%.
Mitigated defects from airborne molecular contamination (AMC) and resist aging, enhancing process stability.

Conclusions:

Asynchronously pulsed plasma development offers a highly selective, low-damage, defect-suppressing strategy for high-resolution lithography.
The technique improves patterning fidelity for sub-10 nm features and broadens the lithography process margin.
Demonstrated potential for both spin-coated and dry-deposited resists, regardless of deposition method.