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Related Experiment Video

Updated: Jun 14, 2026

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

Hydrogen Peroxide-Enabled High-Quality Transition Interface for Top-Gated Molybdenum Disulfide Field-Effect

Minjong Lee¹, Thi Thu Huong Chu², Si Eun Yu^2,3

¹Department of Electrical and Computer Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States.

|June 12, 2026

Summary

This summary is machine-generated.

Hydrogen peroxide (H2O2)-driven atomic layer deposition (ALD) enables uniform high-k dielectric integration on 2D materials like molybdenum disulfide (MoS2). This method minimizes degradation, paving the way for advanced, low-power electronics.

Keywords:

S−O interface atomic layer deposition (ALD)equivalent oxide thickness (EOT)hydrogen peroxide (H2O2)interface engineering subthreshold slope (SS)two-dimensional (2D) materials

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Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

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Published on: December 5, 2015

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Last Updated: Jun 14, 2026

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Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

Area of Science:

Materials Science
Nanotechnology
Semiconductor Physics

Background:

Two-dimensional (2D) transition-metal dichalcogenides (TMDs) are promising for next-generation electronics.
Integrating ultrathin high-k dielectrics with TMDs is challenging due to their inert surfaces.
Existing atomic layer deposition (ALD) oxidants (H2O, O3) present trade-offs between nucleation and interface quality.

Purpose of the Study:

To develop a novel ALD process for high-k dielectrics on 2D materials.
To overcome the limitations of water and ozone as oxidants in ALD for TMDs.
To improve the performance and reliability of 2D material-based field-effect transistors (FETs).

Main Methods:

Utilized hydrogen peroxide (H2O2) as an oxidant in ALD for high-k oxide deposition on molybdenum disulfide (MoS2).
Investigated the interfacial chemistry, focusing on S-O bonding and Mo-sulfate formation.
Fabricated and characterized top-gated MoS2 FETs with H2O2-based ALD hafnium oxide (HfO2) dielectrics.

Main Results:

Achieved uniform high-k dielectric coverage on MoS2 with H2O2-driven ALD.
Minimized interface degradation by forming robust S-O interfacial bonds.
Demonstrated MoS2 FETs with steep subthreshold slopes (~70 mV/dec), low hysteresis (~42 mV), and an equivalent oxide thickness (EOT) of ~0.9 nm.
Observed improved device performance compared to previous MoS2 FETs with single dielectrics.

Conclusions:

H2O2-driven ALD is a viable method for integrating high-k dielectrics with 2D materials.
Robust S-O interfacial bonding is key to preserving 2D channel integrity.
This approach enables CMOS-compatible 2D gate stacks for low-power, 3D-integrated devices.