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Oxidative Cleavage of Alkenes: Ozonolysis

Oxidative Cleavage of Alkenes: Ozonolysis

In ozonolysis, ozone is used to cleave a carbon–carbon double bond to form aldehydes and ketones, or carboxylic acids, depending on the work-up.
Ozone is a symmetrical bent molecule stabilized by a resonance structure.

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Ozone Surface Pretreatment for Enhanced β-Ga₂O₃/Dielectric Interface Engineering.

Joy Roy¹, Adam A Gruszecki¹, Khushabu S Agrawal²

¹Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States.

ACS Applied Materials & Interfaces

|May 29, 2026

Summary

A new ozone (O3) prepulsing method effectively cleans beta-gallium oxide (β-Ga2O3) surfaces before atomic layer deposition. This strategy significantly improves the performance of β-Ga2O3/aluminum oxide (Al2O3) gate dielectrics by minimizing carbon contamination.

Keywords:

ALD XPS gallium oxide interface trap density ozone prepulsing surface passivation

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Area of Science:

Materials Science
Semiconductor Physics
Surface Chemistry

Background:

Gallium oxide (Ga2O3) is a promising ultra-wide bandgap semiconductor for power electronics.
Achieving high-quality gate dielectric interfaces is crucial for optimizing Ga2O3-based devices.
Existing surface treatments for Ga2O3 often fail to prevent carbon contamination during dielectric deposition.

Purpose of the Study:

To investigate the effectiveness of various oxidative surface treatments on β-Ga2O3.
To identify the cause of performance discrepancies despite carbon reduction.
To develop an improved surface treatment strategy for β-Ga2O3/Al2O3 interfaces.

Main Methods:

In situ X-ray photoelectron spectroscopy (XPS) for surface analysis.
Ex situ capacitance-voltage (C-V) measurements for electrical characterization.
Atomic layer deposition (ALD) for dielectric layer growth.
Ozone (O3) prepulsing as a novel surface treatment.

Main Results:

Standard oxidative treatments (O2 plasma, UV-O3, O2 annealing) reduced surface carbon but did not improve electrical performance.
Carbon readsorption during ALD thermal equilibration was identified as the limiting factor.
O3 prepulsing immediately before ALD significantly reduced carbon contamination and improved interface quality.
Marked improvements in flat-band voltage, interface trap density, and frequency dispersion were observed with O3 prepulsing.

Conclusions:

Ozone prepulsing is a highly effective method for decontaminating β-Ga2O3 surfaces prior to Al2O3 dielectric deposition.
This technique minimizes the window for carbonaceous species readsorption, leading to superior interface properties.
O3 prepulsing offers a practical and scalable solution for fabricating high-performance β-Ga2O3 metal-oxide-semiconductor devices.