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Air sensitivity of GaSe 2D material and its potential implications on device reliability
Hazel Neill1, Lida Ansari2, Vilas Patil2
1Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade, Cork, T12 R5CP, Ireland. hazel.neill@tyndall.ie.
Discover Nano
|April 17, 2026
Summary
Oxidation degrades exfoliated Gallium Selenide (GaSe), altering its structure and composition. Understanding this degradation is crucial for developing stable nanoelectronic devices through encapsulation strategies.
Area of Science:
- Materials Science
- Solid State Physics
- Surface Chemistry
Background:
- Exfoliated Gallium Selenide (GaSe) is a promising material for nanoelectronic applications.
- Understanding material degradation is critical for device stability and performance.
Purpose of the Study:
- To investigate the oxidation-driven degradation of exfoliated GaSe.
- To elucidate the structural and chemical changes during degradation.
- To identify strategies for enhancing air stability in GaSe-based devices.
Main Methods:
- Density Functional Theory (DFT) calculations.
- Scanning Electron Microscopy (SEM).
- Energy-Dispersive X-ray (EDX) spectroscopy.
- Raman spectroscopy.
Main Results:
- The study identified the β polytype of GaSe with a bandgap of ~1.92 eV.
- Oxidation on the GaSe surface forms Gallium Oxide (Ga2O3), likely initiated by defects.
- Hemispherical, Selenium-rich blisters form, containing amorphous and crystalline Selenium, with a loss of GaSe vibrational modes.
Conclusions:
- Environmental factors significantly impact GaSe stability.
- Encapsulation strategies are essential for interface engineering.
- Developing air-stable GaSe nanoelectronic devices requires addressing degradation pathways.
