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Published on: June 23, 2018
Flexible ambipolar organic field-effect transistors with reverse-offset-printed silver electrodes for a complementary
Junsu Park1, Minseok Kim, Seung-Won Yeom
1Display and Nanosystem Laboratory, College of Engineering, Korea University, Anam-dong, Seoul 139-713, Korea. Sensor System Research Center, Korea Institute of Science and Technology, Seoul 136-791, Korea.
Researchers developed flexible organic transistors and circuits using reverse-offset-printing. Cesium carbonate improved n-channel performance, enabling stable, bendable integrated circuits for large-area applications.
Area of Science:
- Organic electronics
- Flexible electronics
- Semiconductor devices
Background:
- Organic field-effect transistors (OFETs) are key components for flexible electronics.
- Achieving efficient charge injection and transport in OFETs, especially for n-channel operation, remains a challenge.
- Developing complementary circuits on flexible substrates is crucial for integrated electronic systems.
Purpose of the Study:
- To fabricate ambipolar organic field-effect transistors and complementary inverter circuits on flexible substrates using reverse-offset-printing (ROP).
- To investigate the effect of cesium carbonate (Cs2CO3) as an electron-injection/hole-blocking layer on device performance.
- To demonstrate the potential for large-area, inexpensive, and mechanically stable integrated circuits.
Main Methods:
- Fabrication of OFETs and complementary inverter circuits using ROP of silver (Ag) electrodes on a flexible substrate.
- Utilized a diketopyrrolopyrrole-based co-polymer (PDPP-TAT) as the organic semiconductor and poly(methyl methacrylate) as the gate insulator.
- Incorporated cesium carbonate (Cs2CO3) as an interfacial layer via thermal evaporation to enhance n-channel characteristics.
Main Results:
- Achieved ambipolar behavior in OFETs with saturation mobility values of 0.35 cm2 V(-1) s(-1) for p-channel and 0.027 cm2 V(-1) s(-1) for n-channel.
- Demonstrated a complementary inverter circuit fabricated using the ROP process, with selective Cs2CO3 insertion for controlled operation.
- Observed stable device operation under mechanical bending tests with tensile strains up to 0.5%.
Conclusions:
- The integration of ROP and Cs2CO3 interfacial engineering significantly improves n-channel performance in flexible organic transistors.
- The developed complementary inverter circuits exhibit promising characteristics for flexible and large-area integrated electronics.
- These findings highlight the potential for cost-effective, high-performance flexible electronic applications.
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