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Updated: Mar 21, 2026

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds
Published on: December 2, 2013
Design and burn-up analyses of new type holder for silicon neutron transmutation doping
Masao Komeda1, Masaji Arai2, Kazuo Tamai3
1Nuclear Science and Engineering Center, Japan Atomic Energy Agency Shirakata, Tokai-mura, Ibaraki 319-1195, Japan.
Abstract:
We have developed a new silicon irradiation holder with a neutron filter to increase the irradiation efficiency. The neutron filter is made of an alloy of aluminum and B4C particles. We fabricated a new holder based on the results of design analyses. This filter has limited use in applications requiring prolonged use due to a decrease in the amount of (10)B in B4C particles. We investigated the influence of (10)B reduction on doping distribution in a silicon ingot by using the Monte Carlo Code MVP.
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