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Related Experiment Video

Updated: Mar 21, 2026

Implementation of a Reference Interferometer for Nanodetection
16:11

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Published on: April 26, 2014

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Note: Near infrared interferometric silicon wafer metrology.

M S Choi1, H M Park1, K N Joo1

  • 1Department of Photonic Engineering, Chosun University, Gwangju 61452, South Korea.

The Review of Scientific Instruments
|May 2, 2016
PubMed
Summary

This study introduces two near-infrared interferometric methods for silicon wafer metrology. These techniques enable precise measurement of optical thickness and full surface reconstruction for advanced semiconductor manufacturing.

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Area of Science:

  • Semiconductor Manufacturing
  • Optical Metrology
  • Materials Science

Background:

  • Accurate characterization of silicon wafers is critical for semiconductor device fabrication.
  • Traditional metrology techniques may have limitations in non-destructively measuring wafer properties.
  • Near-infrared (NIR) light offers unique advantages due to its transparency through silicon.

Purpose of the Study:

  • To present and validate two novel NIR interferometric techniques for silicon wafer metrology.
  • To demonstrate the capability of these methods for precise wafer characterization.
  • To advance non-contact, high-resolution wafer inspection.

Main Methods:

  • Fiber-based spectrally resolved interferometry for optical thickness measurement.
  • Stitching low-coherence scanning interferometry for full wafer surface reconstruction.
  • Experimental verification using silicon wafer samples.

Main Results:

  • Successfully measured the optical thickness of silicon wafers using spectrally resolved interferometry.
  • Reconstructed complete wafer surfaces with high resolution using stitching interferometry.
  • Validated the accuracy and reliability of both techniques through experimental data.

Conclusions:

  • The described NIR interferometric techniques provide effective solutions for silicon wafer metrology.
  • These methods offer high precision for optical thickness and surface profiling.
  • The study contributes advanced tools for quality control in semiconductor production.