Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Critical Levels of Ozone Over the United Kingdom: Mapping Aggregate Exceedances Over Moderate to High Thresholds.

Journal of research of the National Institute of Standards and Technology·2023
Same author

Harmonization of criteria and terminology in fetal rat skeletal evaluations.

Birth defects research·2023
Same author

Acidification and alkalinization pretreatments of biowastes and their effect on P solubility and dynamics when placed in soil.

Journal of environmental management·2023
Same author

Cognitive Remediation and Social Recovery in Early Psychosis (CReSt-R): protocol for a pilot randomised controlled study.

Pilot and feasibility studies·2022
Same author

Learning how to work in an interprofessional environment: how students transition to allied health professionals working interprofessionally.

Journal of interprofessional care·2021
Same author

Urban distribution of Rhytisma acerinum (Pers.) Fries (tar spot) on sycamore.

The New phytologist·2021

Related Experiment Video

Updated: Mar 21, 2026

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
12:19

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

Published on: April 4, 2017

8.9K

Silicon photonic waveguide metrology using Mach-Zehnder interferometers.

C J Oton, C Manganelli, F Bontempi

    Optics Express
    |May 4, 2016
    PubMed
    Summary

    We present a non-destructive method to map silicon photonics fabrication variations across wafers. This technique precisely characterizes silicon-on-insulator thickness and waveguide width deviations, crucial for integrated devices.

    More Related Videos

    Implementation of a Reference Interferometer for Nanodetection
    16:11

    Implementation of a Reference Interferometer for Nanodetection

    Published on: April 26, 2014

    9.9K
    Fabrication And Characterization Of Photonic Crystal Slow Light Waveguides And Cavities
    11:08

    Fabrication And Characterization Of Photonic Crystal Slow Light Waveguides And Cavities

    Published on: November 30, 2012

    19.6K

    Related Experiment Videos

    Last Updated: Mar 21, 2026

    Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
    12:19

    Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

    Published on: April 4, 2017

    8.9K
    Implementation of a Reference Interferometer for Nanodetection
    16:11

    Implementation of a Reference Interferometer for Nanodetection

    Published on: April 26, 2014

    9.9K
    Fabrication And Characterization Of Photonic Crystal Slow Light Waveguides And Cavities
    11:08

    Fabrication And Characterization Of Photonic Crystal Slow Light Waveguides And Cavities

    Published on: November 30, 2012

    19.6K

    Area of Science:

    • Photonics
    • Materials Science
    • Semiconductor Manufacturing

    Background:

    • Fabrication deviations in silicon photonics impact device performance.
    • Understanding spatial distribution of variations is key for yield optimization.
    • Wavelength-dependent devices like microring resonators are sensitive to these variations.

    Purpose of the Study:

    • To develop a precise, non-destructive procedure for characterizing fabrication deviations in silicon photonics.
    • To map variations in silicon-on-insulator (SOI) thickness and waveguide width across a wafer.
    • To enable characterization of proximity effects in fabrication.

    Main Methods:

    • Independent measurements of SOI thickness and waveguide width.
    • Wafer-level mapping of these deviations.
    • Application of the technique to characterize proximity effects.

    Main Results:

    • Precise, non-destructive characterization of fabrication deviations is achieved.
    • Spatial distribution of SOI thickness and waveguide width variations across the wafer is mapped.
    • The method successfully identifies proximity effects.

    Conclusions:

    • The proposed procedure offers a valuable tool for quality control in silicon photonics manufacturing.
    • Accurate characterization of fabrication variations improves the performance and yield of integrated photonic devices.
    • This technique aids in understanding and mitigating proximity effects during fabrication.