Related Experiment Video

Updated: Mar 21, 2026

Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes
07:00

Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes

Published on: June 25, 2020

7.8K

Demonstration of a III-nitride edge-emitting laser diode utilizing a GaN tunnel junction contact

Benjamin P Yonkee, Erin C Young, Changmin Lee

    Optics Express
    |May 4, 2016
    PubMed

    More Related Videos

    Analysis of Contact Interfaces for Single GaN Nanowire Devices11:13

    Analysis of Contact Interfaces for Single GaN Nanowire Devices

    Published on: November 15, 2013

    9.8K
    Laser-induced Forward Transfer for Flip-chip Packaging of Single Dies08:21

    Laser-induced Forward Transfer for Flip-chip Packaging of Single Dies

    Published on: March 20, 2015

    12.9K

    Related Concept Videos

    Biasing of P-N Junction01:16

    Biasing of P-N Junction

    The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
    In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
    2.4K
    Biasing of Metal-Semiconductor Junctions01:27

    Biasing of Metal-Semiconductor Junctions

    Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
    In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
    796
    Metal-Semiconductor Junctions01:24

    Metal-Semiconductor Junctions

    The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
    Schottky Barriers
    Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
    1.3K
    Schottky Barrier Diode01:27

    Schottky Barrier Diode

    Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
    1.2K
    P-N junction01:11

    P-N junction

    A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
    1.6K