Enhanced emission efficiency and directionality in InGaN/GaN microLEDs laterally enclosed by distributed Bragg...

Area of Science:

• Optoelectronics
• Materials Science
• Photonics

Background:

• Visible-light communication demands efficient, directional Gallium Nitride (GaN) micron-scale light-emitting diodes (µLEDs).
• Current µLED designs face limitations in optical output and beam divergence.
• Data-center optical links require high-bandwidth solutions.

Purpose of the Study:

• To enhance the efficiency and beam directivity of GaN µLEDs.
• To explore the use of distributed Bragg reflectors (DBRs) in µLED design.
• To provide a manufacturable route for improved µLED performance.

Main Methods:

• Fabricated µLEDs with emitting mesas laterally enclosed by a distributed Bragg reflector (DBR).
• Compared performance metrics (optical output, divergence) against reference devices with TiO2 films.
• Utilized air-side and substrate-side emission measurements.

Main Results:

• Achieved approximately 20% higher optical output through air-side emission.
• Demonstrated approximately 130% higher optical output through substrate-side emission.
• Reduced beam divergence by approximately 30% compared to reference devices.

Conclusions:

• The DBR-enclosed µLED design significantly boosts optical output and directional control.
• This approach offers a manufacturable solution for efficient, directional µLEDs.
• The technology is applicable to optical interconnects and advanced display technologies.