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Updated: Mar 21, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Q B Liu1,2, C Y Cai3,4, G W Zhou1,2
1School of Materials Science and Engineering, Xiangtan University, Xiangtan, China.
The revised real space (RRS) method accurately simulates electron backscatter diffraction (EBSD) patterns, offering a larger view field and more precise lattice parameters than the real space (RS) method.
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