A Phosphole Oxide-Containing Organogold(III) Complex for Solution-Processable Resistive Memory Devices with Ternary...

Area of Science:

• Organometallic Chemistry
• Materials Science
• Device Physics

Background:

• Development of novel materials for advanced electronic devices is crucial.
• Resistive memory devices offer potential for high-density data storage.
• Small-molecule organometallic compounds are explored for electronic applications.

Purpose of the Study:

• To synthesize and characterize novel luminescent phosphole oxide-containing alkynylgold(III) complexes.
• To investigate the application of these complexes in solution-processable resistive memory devices.
• To explore the potential for ternary memory performances using these novel materials.

Main Methods:

• Synthesis of phosphole oxide-containing alkynylgold(III) complexes.
• Characterization of the synthesized complexes using spectroscopic and analytical techniques.
• Fabrication and testing of solution-processable resistive memory devices incorporating the complexes.

Main Results:

• Successful synthesis and characterization of a novel class of luminescent gold(III) complexes.
• Demonstrated ternary memory performances with distinct low switching threshold voltages.
• Achieved high OFF/ON1/ON2 current ratios (1/10^3/10^7) and long retention times for three memory states.

Conclusions:

• Phosphole oxide moiety incorporation provides effective charge-trapping sites in gold(III) systems.
• These novel organometallic compounds are promising active materials for multilevel resistive memory devices.
• The study provides insights for developing small-molecule organometallic-based multilevel memory technologies.