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Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
Published on: March 24, 2019
Polarity-tunable spin transport in all-oxide multiferroic tunnel junctions
Rohit Soni1, Adrian Petraru1, Harikrishnan S Nair2
1Nanoelektronik, Technische Fakultät, Christian-Albrechts-Universität zu Kiel, Kiel 24143, Germany. soro@tf.uni-kiel.de hko@tf.uni-kiel.de.
Abstract:
A multiferroic tunnel junction (MFTJ) promisingly offers multinary memory states in response to electric- and magnetic-fields, referring to tunneling electroresistance (TER) and tunneling magnetoresistance (TMR), respectively. In spite of recent progress, a substantial number of questions concerning the understanding of these two intertwined phenomena still remain open, e.g. the role of microstructural/chemical asymmetry at the interfaces of the junction and the effect of an electrode material on the MFTJ properties. In this regard, we look into the multiferroic effect of all-complex-oxide MFTJ (La0.7Sr0.3MnO3/Pb(Zr0.3Ti0.7)O3/La0.7Sr0.3MnO3). The results reveal apparent TER-TMR interplay-captured by the reversible electric-field control of the TMR effect. Finally, microscopy analysis on the MFTJ revealed that the observed TER-TMR interplay is perhaps mediated by microstructural and chemical asymmetry in our nominally symmetric MFTJ.
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