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Related Concept Videos

Alkenes via Reductive Coupling of Aldehydes or Ketones: McMurry Reaction01:22

Alkenes via Reductive Coupling of Aldehydes or Ketones: McMurry Reaction

The radical dimerization of ketones or aldehydes gives vicinal diols through a pinacol coupling reaction. However, the behavior of titanium metals used for the reaction as a source of electrons is unusual. When the reaction is carried out in the presence of titanium, diols can be isolated at low temperatures. Else titanium further reacts with diols, forming alkenes through the McMurry reaction.

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Reductive Transformation of ALD TeO2 into Continuous and Impurity-Free Tellurium Films.

Seung Ho Ryu1,2, Seungsu Kim1,2, Taikyu Kim3

  • 1Electronic and Hybrid Materials Research Center, Korea Institute of Science and Technology, Seoul, Republic of Korea.

Small (Weinheim an Der Bergstrasse, Germany)
|April 18, 2026
PubMed
Summary

Researchers developed a new method to create continuous, ultrathin tellurium (Te) films for 3D integration. This chemical transformation process overcomes tellurium

Keywords:
atomic layer depositionp‐type semiconductorsreductive transformationtelluriumultrathin films

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Area of Science:

  • Materials Science
  • Semiconductor Technology
  • Nanotechnology

Background:

  • Monolithic 3D integration is limited by the lack of low-temperature processable, high-performance p-type channel materials.
  • Tellurium (Te) offers high hole mobility but typically forms discontinuous films via atomic layer deposition (ALD) due to weak surface interactions.

Purpose of the Study:

  • To introduce a novel reductive transformation method for creating continuous, crystalline, and impurity-free tellurium films.
  • To enable the integration of ultrathin p-type chalcogenides into advanced back-end-of-line architectures.

Main Methods:

  • Conversion of continuous atomic layer deposition-grown tellurium dioxide (TeO2) films into tellurium (Te) layers via a reductive transformation.
  • In situ generation of a tellurium tetrahydride (TeH2)-assisted reduction pathway for complete oxygen removal.
  • Preservation of conformality in high aspect ratio structures.

Main Results:

  • Achieved fully continuous tellurium films, even below 5 nm thickness.
  • Demonstrated complete oxygen removal from bulk and interface regions.
  • Resulting tellurium films exhibited low contact resistance and stable switching in nonplanar transistors.

Conclusions:

  • The chemical transformation approach successfully decouples film continuity from surface wettability.
  • This method provides a breakthrough for integrating ultrathin p-type chalcogenides in advanced semiconductor manufacturing.
  • Enables high-performance p-type channels for monolithic 3D integration.