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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

Bridging the p-type gap in oxide electronics with 2D semiconductors

Taikyu Kim1, Seokhyun Hwang2, Jae Kyeong Jeong3

  • 1Department of Electrical Engineering, Stanford University, Stanford, CA, USA.

Communications Engineering
|July 7, 2026
PubMed

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