Recent progress in HfO₂-based ferroelectric devices with oxide semiconductor channels: a comprehensive review.

Area of Science:

• Materials Science
• Semiconductor Physics
• Device Engineering

Background:

• Conventional silicon devices face scaling limitations.
• Perovskite ferroelectrics present CMOS compatibility challenges.
• Alternative material integrations are crucial for advanced semiconductor systems.

Purpose of the Study:

• To provide a comprehensive overview of oxide semiconductor (OS)-based ferroelectric field-effect transistors (FeFETs).
• To explore the synergistic benefits of integrating OSs with HfO2-based ferroelectrics.
• To discuss applications, challenges, and future directions for OS-based FeFET technology.

Main Methods:

• Review of recent advancements in OS-based FeFETs.
• Analysis of integration strategies for OSs and HfO2-based ferroelectrics.
• Examination of device performance across various application domains.

Main Results:

• OS-FeFETs demonstrate potential in flash memory, DRAM, neuromorphic computing, logic, and displays.
• The integration leverages superior interfacial properties and low-temperature fabrication of OS channels.
• Unique advantages address limitations of conventional semiconductor technologies.

Conclusions:

• OS-based FeFETs offer a viable path for next-generation semiconductor devices.
• Further research is needed to overcome scaling challenges for large-scale arrays.
• Continued development is essential for practical implementation and broader adoption.