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Carrier Polarity Control in α-MoTe2 Schottky Junctions Based on Weak Fermi-Level Pinning

Shu Nakaharai1, Mahito Yamamoto1, Keiji Ueno2

  • 1WPI Center for Materials Nanoarchitechtonics, National Institute for Materials Science , Tsukuba 305-0044, Japan.

ACS Applied Materials & Interfaces
|May 21, 2016
PubMed

Keywords:
Fermi-level pinningSchottky junctioncarrier injectionfield-effect transistortransition metal dichalcogenide

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