High-Performance 2D Rhenium Disulfide (ReS2 ) Transistors and Photodetectors by Oxygen Plasma Treatment
Jaewoo Shim1, Aely Oh1, Dong-Ho Kang1
1School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon, 440-746, South Korea.
Advanced Materials (Deerfield Beach, Fla.)
|May 21, 2016
Abstract:
A high-performance ReS2 -based thin-film transistor and photodetector with high on/off-current ratio (10(4) ), high mobility (7.6 cm(2) V(-1) s(-1) ), high photoresponsivity (2.5 × 10(7) A W(-1) ), and fast temporal response (rising and decaying time of 670 ms and 5.6 s, respectively) through O2 plasma treatment is reported.
