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Related Concept Videos

Spin–Spin Coupling: Two-Bond Coupling (Geminal Coupling)01:20

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Two NMR-active nuclei bonded to a central atom can be involved in geminal or two-bond coupling. Geminal coupling is commonly seen between diastereotopic protons in chiral molecules and unsymmetrical alkenes, among others.
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Coordination compounds and complexes exhibit different colors, geometries, and magnetic behavior, depending on the metal atom/ion and ligands from which they are composed. In an attempt to explain the bonding and structure of coordination complexes, Linus Pauling proposed the valence bond theory, or VBT, using the concepts of hybridization and the overlapping of the atomic orbitals. According to VBT, the central metal atom or ion (Lewis acid) hybridizes to provide empty orbitals of suitable...
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In bromoethane, the three methyl protons are coupled to the two methylene protons that are three bonds away. In accordance with the n+1 rule, the signal from the methyl protons is split into three peaks with 1:2:1 relative intensities. The methylene protons appear as a quartet, with the relative intensities of 1:3:3:1.
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Coupling interactions are strongest between NMR-active nuclei bonded to each other, where spin information can be transmitted directly through the pair of bonding electrons. While nuclei polarize their electrons to the opposite spins, the bonding electron pair has opposite spins. Configurations with antiparallel nuclear spins are expected to be lower in energy. When coupling makes antiparallel states more favorable, J is considered to have a positive value. The one-bond coupling constant, 1J,...
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Vicinal or three-bond coupling is commonly observed between protons attached to adjacent carbons. Here, nuclear spin information is primarily transferred via electron spin interactions between adjacent C‑H bond orbitals. This generally favors the antiparallel arrangement of spins, so 3J values are usually positive.
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Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
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A valley and spin filter based on gapped graphene.

Jing Wang1, Mengqiu Long, Wen-Sheng Zhao

  • 1Key Laboratory of RF Circuits and Systems of Ministry of Education of China, Hangzhou Dianzi University, Hangzhou 310018, People's Republic of China.

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This study demonstrates controlling valley- and spin-polarized current in gapped graphene using a novel three-barrier structure. This approach enables tunable spin and valley polarization for advanced electronic devices.

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Spintronics

Background:

  • Gapped graphene exhibits unique electronic properties.
  • Valley and spin polarization are crucial for advanced electronic devices.
  • Spin-orbit coupling is often required for spin polarization phenomena.

Purpose of the Study:

  • To investigate highly valley- and spin-polarized current in single-layer gapped graphene without spin-orbit coupling.
  • To propose a novel three-barrier structure for controlling these currents.
  • To explore the potential for creating new valley and spin devices.

Main Methods:

  • Theoretical study of electron transport in a three-barrier structure.
  • Utilizing spin-splitting barriers and electrical potential barriers with vector potentials.
  • Analyzing valley-dependent reflection and spin-dependent transmission.

Main Results:

  • Achieved highly valley- and spin-polarized current without spin-orbit coupling.
  • Demonstrated valley-dependent reflection and spin-dependent transmission.
  • Showcased tunability of spin and valley polarization by adjusting barrier properties.

Conclusions:

  • The proposed structure effectively generates and controls valley- and spin-polarized currents.
  • This method offers an alternative to spin-orbit coupling for spin polarization.
  • The structure holds promise for the development of novel valley and spin electronic devices.