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Published on: August 2, 2019
Second order anisotropy contribution in perpendicular magnetic tunnel junctions.
A A Timopheev1,2,3, R Sousa1,2,3, M Chshiev1,2,3
1Univ. Grenoble Alpes, INAC-SPINTEC, F-38000 Grenoble, France.
Researchers discovered a higher-order anisotropy in magnetic tunnel junctions, crucial for understanding magnetic storage devices. This anisotropy, dependent on temperature, shifts the magnetic state in reference layers, impacting device performance.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Perpendicular magnetic tunnel junctions (pMTJs) are key components in magnetic storage devices.
- Understanding magnetic anisotropy is crucial for optimizing pMTJ performance.
- Conventional models often use uniaxial anisotropy, which may not fully capture complex magnetic behaviors.
Purpose of the Study:
- To investigate the temperature dependence of magnetic anisotropy in pMTJ pillars.
- To identify and characterize higher-order anisotropy terms beyond the conventional uniaxial model.
- To explore the impact of this anisotropy on the magnetic ground state of pMTJ layers.
Main Methods:
- Fabrication and measurement of pMTJ pillars with diameters from 50 to 150 nm.
- Analysis of hard-axis magnetoresistance loops using an analytical model.
- Temperature-dependent measurements from 5 K to 340 K.
- Ferromagnetic resonance experiments on FeCoB/MgO sheet films for validation.
Main Results:
- A second-order anisotropy term (-K2cos(4)θ) is necessary to accurately model experimental data.
- This higher-order anisotropy was observed in both free and reference layers of the pMTJs.
- The ratio of second-order to first-order anisotropy (-K2/K1) increases significantly at lower temperatures.
- The reference layer transitions from an easy-axis to an easy-cone magnetic ground state below 300 K.
- The easy-cone regime exhibits distinct signatures in the hard-axis magnetoresistance loops.
Conclusions:
- The study reveals the presence and significance of higher-order magnetic anisotropy in pMTJs.
- This anisotropy is of interfacial origin, likely stemming from nanoscale fluctuations at the FeCoB/MgO interface.
- The temperature-dependent shift to an easy-cone state in the reference layer has implications for magnetic device stability and operation.
- The findings necessitate incorporating higher-order anisotropy terms in models for advanced magnetic devices.
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