Second order anisotropy contribution in perpendicular magnetic tunnel junctions.

A A Timopheev1,2,3, R Sousa1,2,3, M Chshiev1,2,3

  • 1Univ. Grenoble Alpes, INAC-SPINTEC, F-38000 Grenoble, France.

Scientific Reports
|June 2, 2016
PubMed
Summary

Researchers discovered a higher-order anisotropy in magnetic tunnel junctions, crucial for understanding magnetic storage devices. This anisotropy, dependent on temperature, shifts the magnetic state in reference layers, impacting device performance.

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