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Updated: Mar 20, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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Resistive Switching in All-Oxide Ferroelectric Tunnel Junctions with Ionic Interfaces.

Qi Hang Qin1, Laura Äkäslompolo1, Noora Tuomisto2

  • 1NanoSpin, Department of Applied Physics, Aalto University School of Science, P.O. Box, 15100, FI-00076, Aalto, Finland.

Advanced Materials (Deerfield Beach, Fla.)
|June 2, 2016
PubMed
Summary

Giant resistive switching in oxide tunnel junctions using ferroelectric and paraelectric barriers is demonstrated. This effect, driven by electric fields and oxygen vacancy migration, is efficient even at low temperatures.

Keywords:
Tsu-Esaki tunneling current formulaferroelectric tunnel junctionsoxygen vacancy migrationresistive switchingtransition metal oxides

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