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Raman Spectroscopy Instrumentation: Overview01:26

Raman Spectroscopy Instrumentation: Overview

A conventional Raman spectrophotometer includes a laser source, a sample holding system, a wavelength selector, and a detector.
The monochromatic laser source, typically using visible or near-infrared radiation, generates a highly focused beam of light. This light interacts with the molecules of the sample, scattering some of the light. Liquid and gaseous samples are usually tested in ordinary glass capillaries, while solids can be analyzed as powders packed in capillaries or as potassium...

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RM 8111: Development of a Prototype Linewidth Standard.

Michael W Cresswell1, William F Guthrie1, Ronald G Dixson1

  • 1National Institute of Standards and Technology, Gaithersburg, MD 20899.

Journal of Research of the National Institute of Standards and Technology
|June 9, 2016
PubMed
Summary
This summary is machine-generated.

NIST has developed new Single-Crystal Critical Dimension Reference Materials (SCCDRMs) for calibrating semiconductor manufacturing tools. These reference materials ensure accurate measurements for advanced microelectronics fabrication.

Keywords:
AFMCDHRTEMSCCDRMcalibrationdimensional standardslattice-plane selective etchlinewidthmetrologyreference materialssingle-crystal silicontraceabilityuncertainty

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Area of Science:

  • Materials Science
  • Metrology
  • Semiconductor Manufacturing

Background:

  • Accurate critical dimension (CD) measurements are crucial for semiconductor manufacturing.
  • Existing metrology instruments require precise calibration to ensure reliable results.
  • The development of advanced micro- and nano-electronic devices necessitates new reference standards.

Purpose of the Study:

  • To introduce a new generation of Single-Crystal Critical Dimension Reference Materials (SCCDRMs) designated RM 8111.
  • To provide a reliable standard for calibrating metrology instruments used in semiconductor fabrication.
  • To enhance the accuracy and traceability of critical dimension measurements in the microelectronics industry.

Main Methods:

  • Fabrication of silicon test-structure chips and carrier wafers using lattice-plane-selective etching.
  • Utilizing Atomic Force Microscope (AFM) measurements for determining certified critical dimensions.
  • Referencing AFM measurements to high-resolution transmission electron microscopy (HRTEM) images for lattice plane counting.

Main Results:

  • Development of prototype SCCDRM materials (RM 8111) configured as 10 mm × 11 mm silicon chips on 200 mm wafers.
  • Determination of certified CDs traceable to the SI meter through AFM and HRTEM analysis.
  • Demonstration of a fabrication process compatible with micro-electro-mechanical systems (MEMS) device fabrication.

Conclusions:

  • The new SCCDRMs offer a traceable and accurate standard for critical dimension metrology.
  • These materials are essential for advancing the precision and reliability of semiconductor manufacturing processes.
  • The successful development of RM 8111 signifies a step forward in metrological standards for the microelectronics industry.