ALD/MLD processes for Mn and Co based hybrid thin films

Area of Science:

• Materials Science
• Nanotechnology
• Thin Film Deposition

Background:

• Transition metal-organic materials offer unique electronic and magnetic properties.
• Atomic/molecular layer deposition (ALD/MLD) is an emerging technique for precise thin-film fabrication.

Purpose of the Study:

• To develop novel transition metal-organic thin films using manganese or cobalt and terephthalate.
• To investigate the deposition process and material properties using ALD/MLD.

Main Methods:

• Thin films were deposited using atomic/molecular layer deposition (ALD/MLD).
• Precursors included metal β-diketonates (Mn(thd)3, Co(acac)3, Co(thd)2) and terephthalic acid.
• Film characterization involved X-ray reflectivity (XRR), atomic force microscopy (AFM), grazing-incidence X-ray diffraction (GIXRD), X-ray photoelectron spectroscopy (XPS), and Fourier-transform infrared spectroscopy (FTIR).

Main Results:

• Homogeneous, smooth, amorphous metal-terephthalate hybrid thin films were successfully grown.
• Growth rates achieved were 1-2 Å per cycle.
• Films demonstrated stability towards humidity and high temperatures (300-400 °C) in various atmospheres.

Conclusions:

• ALD/MLD is effective for fabricating novel transition metal-organic thin films.
• The resulting manganese- and cobalt-terephthalate films possess desirable properties for potential applications.