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Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe
D Kriegner1, K Výborný2, K Olejník2
1Charles University in Prague, Ke Karlovu 3, Praha 2 121 16, Czech Republic.
Nature Communications
|June 10, 2016
Summary
Researchers developed a novel multiple-stable memory device using manganese telluride (MnTe), an antiferromagnetic material. This breakthrough offers robust, multi-state data storage with potential for advanced magnetic memory technologies.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Spintronics
Background:
- Commercial magnetic memories utilize ferromagnetic materials relying on spin bistability.
- Recent advancements include bistable memory devices based on antiferromagnetic metals.
- Antiferromagnetic materials offer potential for novel memory applications due to unique spin properties.
Purpose of the Study:
- To demonstrate a multiple-stable memory device utilizing epitaxial manganese telluride (MnTe).
- To investigate the antiferromagnetic anisotropic magnetoresistance (AMR) in MnTe for electrical readout.
- To explore the potential of MnTe as a material for advanced antiferromagnetic memory devices.
Main Methods:
- Fabrication of epitaxial MnTe films.
- Measurement of zero-field antiferromagnetic anisotropic magnetoresistance (AMR) with varying magnetic field angles.
- Setting multiple memory states using heat-assisted magneto-recording and controlled writing field directions.
Main Results:
- Demonstrated a smoothly varying zero-field AMR in MnTe with harmonic angular dependence.
- Successfully set and electrically read out multiple stable antiferromagnetic memory states.
- Observed multiple stability attributed to domain distributions along three magnetic easy axes.
Conclusions:
- Epitaxial MnTe exhibits favorable micromagnetic characteristics for multiple-stable memory applications.
- The continuously varying AMR in MnTe enables electrical readout of complex antiferromagnetic memory states.
- Antiferromagnetic memory devices based on MnTe offer robustness against magnetic field perturbations and multi-stability.
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