Frequency-Domain Models for Nonlinear Microwave Devices Based on Large-Signal Measurements

Jeffrey A Jargon1, Donald C DeGroot1, K C Gupta2

  • 1National Institute of Standards and Technology, 325 Broadway, Boulder, CO 80305.

Summary

This study introduces nonlinear large-signal scattering (S) parameters for analyzing signal behavior in electronic circuits. These new parameters offer a more general approach than existing methods for nonlinear circuit design and analysis.

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