Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOS Capacitor01:25

MOS Capacitor

1.7K
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
1.7K
Design Example: Capacitance Multiplier Circuit01:20

Design Example: Capacitance Multiplier Circuit

1.7K
In integrated circuit technology, a capacitance multiplier is often utilized to produce a larger capacitance value when a small physical capacitance falls short. This is achieved by a circuit that multiplies capacitance values by a factor of up to 1000, such that a 10-pF capacitor can replicate the performance of a 100-nF capacitor.
The circuit illustrated in Figure 1 below incorporates two op-amps, with the first operating as a voltage follower and the second acting as an inverting amplifier.
1.7K
Equivalent Capacitance01:19

Equivalent Capacitance

826
From the study of resistive circuits, it is understood that employing a series-parallel combination serves as an effective strategy for simplifying circuits. Capacitors can be arranged within a circuit in one of two ways: a series configuration or a parallel configuration. The way these capacitors are connected to a battery will influence both the potential drop across each individual capacitor and the size of the charge that each capacitor can store. This is determined by the specific type of...
826
Equivalent Capacitance01:19

Equivalent Capacitance

2.3K
Multiple capacitors can be connected in a circuit in series or parallel configuration. When the capacitor combination is connected to a battery, the potential drop across each capacitor and the magnitude of charge stored in the individual capacitor depends on the type of the connection. The capacitor combination is replaced by a single equivalent capacitor that stores the same amount of charge as the combination for a given potential difference.
The following strategies are adopted to calculate...
2.3K
Capacitors and Capacitance01:18

Capacitors and Capacitance

10.0K
A device consisting of two electrical conductors that are separated by a distance and used to store electrical charges is called a capacitor. The space between the conductors is either a vacuum or an insulating material, called a dielectric. Capacitors have many applications, ranging from filtering static from radio reception to energy storage in heart defibrillators.
When the conductors are two identical parallel plates, it is called a parallel plate capacitor. When battery terminals are...
10.0K
Capacitor With A Dielectric01:18

Capacitor With A Dielectric

5.2K
Parallel plate capacitors consist of two conducting plates separated by a certain distance. However, it is mechanically difficult to hold the large plates parallel to each other without actual contact. Hence, a dielectric layer is commonly placed between the plates, which provides an easy solution for holding the plates together with a small gap and increases the capacitance of the capacitor.
Dielectrics are non-conducting materials with no free or loosely bound electrons. When a dielectric is...
5.2K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Pulsed Laser and Atomic Layer Deposition of CMOS-Compatible Vanadium Dioxide: Enabling Ultrathin Phase-Change Films.

ACS applied electronic materials·2025
Same author

Introducing Berry phase gradients along the optical path via propagation-dependent polarization transformations.

Nanophotonics (Berlin, Germany)·2024
Same author

Bound States in the Continuum and Long-Range Coupling of Polaritons in Hexagonal Boron Nitride Nanoresonators.

ACS photonics·2024
Same author

Highly Confined Hybridized Polaritons in Scalable van der Waals Heterostructure Resonators.

ACS nano·2024
Same author

Millimeter-wave to near-terahertz sensors based on reversible insulator-to-metal transition in VO<sub>2</sub>.

Communications materials·2024
Same author

Topologically protected optical polarization singularities in four-dimensional space.

Science advances·2023

Related Experiment Video

Updated: Mar 18, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
15:47

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

17.1K

Graphene Quantum Capacitors for High Frequency Tunable Analog Applications.

Clara F Moldovan1, Wolfgang A Vitale1, Pankaj Sharma1

  • 1Nanoelectronics Devices Laboratory and ‡Laboratory of Electromagnetics and Antennas, Ecole Polytechnique Fédérale de Lausanne , 1015 Lausanne, Switzerland.

Nano Letters
|July 9, 2016
PubMed
Summary

Graphene quantum capacitors (GQCs) enable radio-frequency functions by voltage-tuning capacitance. These GQCs offer competitive performance for high-frequency analog applications, complementing existing technologies.

Keywords:
CVDRFgraphenequantum capacitancetunable capacitors

More Related Videos

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

16.2K
Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

15.5K

Related Experiment Videos

Last Updated: Mar 18, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
15:47

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

17.1K
Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

16.2K
Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

15.5K

Area of Science:

  • Materials Science
  • Electrical Engineering
  • Nanotechnology

Background:

  • Graphene quantum capacitors (GQCs) show potential for radio-frequency (RF) applications.
  • Voltage-tunable capacitance is crucial for high-frequency analog circuits.

Purpose of the Study:

  • To demonstrate and experimentally assess the performance of GQCs at microwave frequencies.
  • To compare GQC performance with MEMS and MOSFETs for analog applications.
  • To propose a CMOS-compatible fabrication process for GQCs.

Main Methods:

  • Fabrication of GQCs using a CMOS-compatible process.
  • Experimental characterization of GQC performance at microwave frequencies (up to 10 GHz).
  • Analysis of figures of merit, including tuning ratio and Q-factor, across a temperature range (150-350 K).

Main Results:

  • Demonstrated GQCs with picofarad capacitance and a tuning ratio of 1.34:1 at 1.25 V.
  • Achieved Q-factors up to 12 at 1 GHz.
  • Detailed study of GQC figures of merit from 150 K to 350 K.

Conclusions:

  • GQCs are viable enablers of RF functions through voltage-tunable capacitance.
  • GQCs offer competitive performance and tunability for high-frequency analog applications.
  • A systematic approach to optimize GQC performance is described.