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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

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Double-layer-gate architecture for few-hole GaAs quantum dots.

D Q Wang1, A R Hamilton, I Farrer

  • 1School of Physics, University of New South Wales, Sydney NSW 2052, Australia.

Nanotechnology
|July 9, 2016
PubMed
Summary

Researchers fabricated single and double hole quantum dots using a novel double-layer-gate design. This allows for tunable inter-dot coupling in double quantum dot configurations, advancing semiconductor device research.

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