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Preparation of Samples for Electron Microscopy01:20

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Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
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Layer Control of WSe2 via Selective Surface Layer Oxidation.

Zhen Li, Sisi Yang, Rohan Dhall

  • 1XEI Scientific , Redwood City, California 94063, United States.

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|July 9, 2016
PubMed
Summary

Remote oxygen plasma selectively oxidizes the top layer of tungsten diselenide (WSe2) flakes, controllably reducing their thickness. This method offers precise layer-by-layer thickness control for WSe2 materials.

Keywords:
MoSe2WSe2dichalcogenideoxidationoxygen plasmaphotoluminescence

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Area of Science:

  • Materials Science
  • Surface Science
  • Nanotechnology

Background:

  • Tungsten diselenide (WSe2) is a layered transition metal dichalcogenide with unique optoelectronic properties.
  • Controlling the number of layers in WSe2 is crucial for tuning its electronic and optical behavior.

Purpose of the Study:

  • To investigate the effect of remote oxygen plasma treatment on the thickness and photoluminescence of WSe2 and MoSe2.
  • To develop a method for controlled, layer-by-layer thinning of WSe2 flakes.

Main Methods:

  • Exposure of mono- and few-layer WSe2 and MoSe2 to remote oxygen plasma.
  • Characterization using Raman spectroscopy, photoluminescence (PL) spectroscopy, atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS).

Main Results:

  • Oxygen plasma treatment selectively oxidizes the topmost layer of WSe2, reducing its effective layer number (N-layer to N-1).
  • Photoluminescence intensity increases and peak positions blue-shift for bilayer and trilayer WSe2, with monolayer PL becoming absent after treatment.
  • Raman spectra, AFM, and XPS confirm layer reduction and surface tungsten oxide (WOx) formation, which can be removed with KOH.

Conclusions:

  • Remote oxygen plasma provides a self-limiting, layer-by-layer method for thinning WSe2 flakes.
  • The process is controllable by varying treatment duration, offering a promising technique for precise thickness engineering of WSe2.