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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
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Reversible phase modulation and hydrogen storage in multivalent VO2 epitaxial thin films.
Hyojin Yoon1, Minseok Choi2,3, Tae-Won Lim2
1Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea.
Nature Materials
|July 12, 2016
Summary
Hydrogen can be reversibly incorporated into vanadium dioxide (VO2), enabling dynamic control over its electronic properties. This discovery opens new avenues for proton-based electronics and hydrogen storage applications.
Area of Science:
- Materials Science
- Solid-State Chemistry
- Condensed Matter Physics
Background:
- Vanadium dioxide (VO2) exhibits phase modulation influenced by hydrogen incorporation.
- Understanding hydrogen's role in high-doping regimes of VO2 is limited.
- VO2 is a correlated oxide with a 3d(1) electronic configuration.
Purpose of the Study:
- To investigate the high-doping regime of hydrogen in VO2.
- To elucidate the electronic phase modulation of vanadium oxyhydride.
- To explore potential applications in proton-based electronics and hydrogen storage.
Main Methods:
- Reversible incorporation of hydrogen into VO2 interstitial sites.
- Analysis of electronic phase modulation in vanadium oxyhydride.
- Demonstration of two-step insulator-metal-insulator phase transitions.
Main Results:
- Up to two hydrogen atoms per VO2 unit cell can be reversibly absorbed and released without lattice damage.
- Hydrogenation induces a two-step insulator (VO2)-metal (HxVO2)-insulator (HVO2) phase modulation.
- This modulation is linked to inter-integer d-band filling.
Conclusions:
- Reversible topotactic phase modulation in VO2 is achievable via hydrogenation.
- Findings suggest potential for proton-based electronics (protonics) and novel hydrogen storage solutions.
- The study deepens the understanding of hydrogen-material interactions in correlated oxides.
