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Related Concept Videos

Semiconductors01:22

Semiconductors

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There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
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Theory of Metallic Conduction01:17

Theory of Metallic Conduction

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The conduction of free electrons inside a conductor is best described by quantum mechanics. However, a classical model makes predictions close to the results of quantum mechanics. It is called the theory of metallic conduction.
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Types of Semiconductors01:20

Types of Semiconductors

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Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
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Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
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Electrocyclic reactions are reversible reactions. They involve an intramolecular cyclization or ring-opening of a conjugated polyene. Shown below are two examples of electrocyclic reactions. In the first reaction, the formation of the cyclic product is favored. In contrast, in the second reaction, ring-opening is favored due to the high ring strain associated with cyclobutene formation.
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Tetrahedral Complexes
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Synthesis of Non-uniformly Pr-doped SrTiO3 Ceramics and Their Thermoelectric Properties
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Electronic Conduction in Ti/Poly-TiO2/Ti Structures.

Faramarz Hossein-Babaei1, Navid Alaei-Sheini1

  • 1Electronic Materials Laboratory, Electrical Engineering Department, K. N. Toosi University of Technology, Tehran 16317-14191, Iran.

Scientific Reports
|July 13, 2016
PubMed
Summary
This summary is machine-generated.

Electronic conduction in titanium dioxide (TiO2) films was studied. Ionized oxygen vacancies (IOVs) moving on grain facets, not interiors, explain resistance switching in these polycrystalline devices.

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Area of Science:

  • Materials Science
  • Solid State Physics
  • Electronic Engineering

Background:

  • Research often focuses on nanometric single-grain oxides.
  • Polycrystalline oxide layers offer a link to varistor literature and novel grain boundary phenomena.

Purpose of the Study:

  • Investigate electronic conduction in Ti/poly-TiO2-x/Ti structures.
  • Understand conduction mechanisms involving grain boundaries and oxygen vacancies.

Main Methods:

  • Fabrication of Ti/poly-TiO2-x/Ti structures with varying oxygen vacancy distributions.
  • Electrical characterization under different electric fields and humidity levels.

Main Results:

  • Ohmic conduction at low fields, transitioning to nonlinear, hysteretic low resistance at higher fields.
  • Observed threshold field is significantly lower than in single-grain memristors.
  • Threshold field dependence on relative humidity suggests hydroxyl-assisted vacancy motion.

Conclusions:

  • Electronic conduction is dominated by ionized oxygen vacancy (IOV) motion on grain facets.
  • Polycrystalline TiO2 exhibits distinct resistance switching behavior driven by grain boundary effects.
  • Environmental factors like humidity influence the switching characteristics.